Standard Cell
Cambridge Integration’s Standard Cell redefines SiC MOSFET packaging with ultra-low inductance (<1 nH) and superior thermal performance (0.59 K/W). Designed for EV inverters, renewable energy, and industrial drives, this surface-mountable solution maximizes power density while simplifying manufacturing.
Key Features
Ultra-Low Inductance
Achieves <1 nH power loop inductance via optimized flex-PCB interconnects, reducing switching losses by 72% versus TO-247 packages.
Advanced Cooling
Step-etched AMB substrate enables 0.59 K/W thermal resistance, with silver sintering support for 0.47 K/W in high-power designs.
Scalable Assembly
Surface-mountable architecture eliminates wire bonds, and scales seamlessly for parallel configurations.
Specifications
Standard Cell
Losses Analysis: Switching Losses
72% reduction in total switching losses compared to TO-247 package carrying the same die.
Less heat generated in the devices. More mileage or less battery pack for the same range.