Our Technology
1
Ultra-Low Inductance
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Flex-PCB Interconnects: Replaces wire bonds with polyimide-based circuits, enabling tightly coupled, symmetric traces for flux cancellation.
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Negative Magnetic Coupling: Precisely spaced conductors generate opposing magnetic fields, reducing net inductance.
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1.2 kV Device Utilization: Ultra-low inductance enables a 1000 V DC bus using 1.2 kV SiC devices, maximizing efficiency and switching performance without requiring 1.7 kV devices.
2
Advanced Thermal Management
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Step-Etched AMB Substrate: Direct-bonded aluminum nitride (AlN) or silicon nitride (Si₃N₄) ceramic provides a low-impedance thermal path from die to cooling plate.
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Dual-Sided Cooling: Optional symmetric cooling channels extract heat from both top and bottom surfaces, reducing hotspot temperatures.
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Silver Sintering: High-conductivity die attach further cuts thermal resistance to 0.45 K/W.
3
Best Current Sharing
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Symmetric Parallel Layout: Identical current paths and loop inductances ensure matched impedance between all paralleled dies, reducing circulating currents and suppressing switching imbalance.
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Rds(on) Binning: Standard Cells are paired by conduction resistance to eliminate steady-state current mismatch, improving efficiency and equalizing junction temperature.
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Differential-Mode Inductance Control: Balanced AC inductance enforces dynamic current sharing, allowing parallel operation even between dies of different types or process lots.
4
Total Switching Losses Reduction
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Ultra-Low Inductance (<1 nH): Minimizes voltage spikes and ringing during switching transitions, cutting energy wasted as EMI and heat.
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Flux-Canceling Layout: Opposing current paths in the flex-PCB interconnect neutralize magnetic fields, enabling faster di/dt (40 A/ns) with lower losses.
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Zero Gate Loop Resistance: Integrated Kelvin connections eliminate common-source inductance, ensuring clean, synchronous switching without overshoot.